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SiC MOSFETs using trench structure paper 推薦

1. 650伏特SiC溝槽MOSFET,用於高效能電源 "650 V SiC Trench MOSFET for high-efficiency power supplies" 作者: R. Siemieniec, René Mente, W. Jantscher, David Kammerlander, Ute Wenzel, T. Aichinger 年份: 2019 期刊: 2019 21st European Conference on Power Electronics and Applications (EPE '19 ECCE Europe) 連結 2. 高性能SiC溝槽裝置,具有超低導通電阻 "High performance SiC trench devices with ultra-low ron" 作者: T. Nakamura, Y. Nakano, M. Aketa, R. Nakamura, S. Mitani, H. Sakairi, Y. Yokotsuji 年份: 2011 期刊: 2011 International Electron Devices Meeting 連結 3. 新穎的發展,提升SiC功率裝置和模組效率 "Novel developments towards increased SiC power device and module efficiency" 作者: T. Nakamura, M. Aketa, Y. Nakano, M. Sasagawa, T. Otsuka 年份: 2012 期刊: 2012 IEEE Energytech 連結 4. 整合快速恢復MPS二極體的4H-SiC溝槽MOSFET "4H-SiC trench MOSFET with integrated fast recovery MPS diode" 作者: T. Dai, C. W. Chan, Xc Deng, Huaping Jiang, P. Gammon, M. Jennings, Phil Mawby 年份: 2017 期刊: Electronics Letters 連結 5. 具有底部氧化物保護的4H-SiC