SiC MOSFETs using trench structure paper 推薦

1. 1. 650伏特SiC溝槽MOSFET，用於高效能電源

   "650 V SiC Trench MOSFET for high-efficiency power supplies"
   作者: R. Siemieniec, René Mente, W. Jantscher, David Kammerlander, Ute Wenzel, T. Aichinger
   年份: 2019
   期刊: 2019 21st European Conference on Power Electronics and Applications (EPE '19 ECCE Europe)
   連結

2. 2. 高性能SiC溝槽裝置，具有超低導通電阻

   "High performance SiC trench devices with ultra-low ron"
   作者: T. Nakamura, Y. Nakano, M. Aketa, R. Nakamura, S. Mitani, H. Sakairi, Y. Yokotsuji
   年份: 2011
   期刊: 2011 International Electron Devices Meeting
   連結

3. 3. 新穎的發展，提升SiC功率裝置和模組效率

   "Novel developments towards increased SiC power device and module efficiency"
   作者: T. Nakamura, M. Aketa, Y. Nakano, M. Sasagawa, T. Otsuka
   年份: 2012
   期刊: 2012 IEEE Energytech
   連結

4. 4. 整合快速恢復MPS二極體的4H-SiC溝槽MOSFET

   "4H-SiC trench MOSFET with integrated fast recovery MPS diode"
   作者: T. Dai, C. W. Chan, Xc Deng, Huaping Jiang, P. Gammon, M. Jennings, Phil Mawby
   年份: 2017
   期刊: Electronics Letters
   連結

5. 5. 具有底部氧化物保護的4H-SiC溝槽MOSFET

   "4H-SiC Trench MOSFET with Bottom Oxide Protection"
   作者: Y. Kagawa, N. Fujiwara, Katsutoshi Sugawara, Rina Tanaka, Yutaka Fukui, Yasuki Yamamoto, N. Miura, M. Imaizumi, S. Nakata, S. Yamakawa
   年份: 2014
   期刊: Materials Science Forum
   連結