SiC MOSFETs using trench structure paper 推薦

  1. 1. 650伏特SiC溝槽MOSFET,用於高效能電源

    "650 V SiC Trench MOSFET for high-efficiency power supplies"
    作者: R. Siemieniec, René Mente, W. Jantscher, David Kammerlander, Ute Wenzel, T. Aichinger
    年份: 2019
    期刊: 2019 21st European Conference on Power Electronics and Applications (EPE '19 ECCE Europe)
    連結

  2. 2. 高性能SiC溝槽裝置,具有超低導通電阻

    "High performance SiC trench devices with ultra-low ron"
    作者: T. Nakamura, Y. Nakano, M. Aketa, R. Nakamura, S. Mitani, H. Sakairi, Y. Yokotsuji
    年份: 2011
    期刊: 2011 International Electron Devices Meeting
    連結

  3. 3. 新穎的發展,提升SiC功率裝置和模組效率

    "Novel developments towards increased SiC power device and module efficiency"
    作者: T. Nakamura, M. Aketa, Y. Nakano, M. Sasagawa, T. Otsuka
    年份: 2012
    期刊: 2012 IEEE Energytech
    連結

  4. 4. 整合快速恢復MPS二極體的4H-SiC溝槽MOSFET

    "4H-SiC trench MOSFET with integrated fast recovery MPS diode"
    作者: T. Dai, C. W. Chan, Xc Deng, Huaping Jiang, P. Gammon, M. Jennings, Phil Mawby
    年份: 2017
    期刊: Electronics Letters
    連結

  5. 5. 具有底部氧化物保護的4H-SiC溝槽MOSFET

    "4H-SiC Trench MOSFET with Bottom Oxide Protection"
    作者: Y. Kagawa, N. Fujiwara, Katsutoshi Sugawara, Rina Tanaka, Yutaka Fukui, Yasuki Yamamoto, N. Miura, M. Imaizumi, S. Nakata, S. Yamakawa
    年份: 2014
    期刊: Materials Science Forum
    連結

留言

這個網誌中的熱門文章

20231112 New test

精子與射精運作原理